Datasheet > AP6N3R1LH

AP6N3R1LH

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	72K
描述
TO-252

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中文翻译

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AP6N3R1LH 数据手册

AP6N3R1LH

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

R_DS(ON)

I_D

60V

3.1mΩ

100A

▼ Simple Drive Requirement

▼ Low On-resistance

▼ RoHS Compliant & Halogen-Free

Description

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TO-252(H)

The TO-220 package is widely preferred for all commercial-

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resistance.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

100

400

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

Total Power Dissipation⁴

Single Pulse Avalanche Energy³

Storage Temperature Range

Operating Junction Temperature Range

104

℃

135

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)⁴

1.2

Rthj-a

62.5

Data and specifications subject to change without notice

201612231

12 3 4 5 6

中文翻译

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