Datasheet > AP6C036MT

AP6C036MT

更新时间： 2024-10-31 17:15:55

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
10页	264K
描述
PMPAK-5x6

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中文翻译

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数据手册

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AP6C036MT 数据手册

AP6C036MT

Halogen-Free Product

Advanced Power

Electronics Corp.

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

D1 D1 D2 D2

▼ Simple Drive Requirement

N-CH BV_DSS

R_DS(ON)

60V

36mΩ

7.1A

▼ Good Thermal Performance

▼ Fast Switching Performance

▼ RoHS Compliant & Halogen-Free

I_D

P-CH BV_DSS

-60V

R_DS(ON)

72mΩ

-5.2A

S1 G1 S2 G2

Description

I_D

AP6C036 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

The PMPAK

5x6 package is special for voltage conversion

application using standard infrared reflow technique with the

backside heat sink to achieve the good thermal performance.

PMPAK^®5x6

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

N-channel

P-channel

-60

V_DS

V_GS

Drain-Source Voltage

+20

7.1

5.6

Gate-Source Voltage

+20

-5.2

-4.1

-30

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Drain Current, V_GS@ 10V³

Pulsed Drain Current¹

P_D@T_A=25℃

T_STG

Total Power Dissipation

3.57

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Units

Rating

N-channel

P-channel

Rthj-c

Rthj-a

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

℃/W

202011121

12 3 4 5 6 7...10

中文翻译

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