AP6N090Y
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
S
BVDSS
60V
90mΩ
3.5A
D
▼ Lower Gate Charge
RDS(ON)
D
3
▼ Fast Switching Characteristic
ID
G
D
▼ RoHS Compliant & Halogen-Free
SOT-26
D
Description
D
S
AP6N090 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
G
The SOT-26 package is widely used for all commercial-industrial
applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
VDS
VGS
Drain-Source Voltage
60
+20
V
Gate-Source Voltage
V
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
ID@TA=25℃
ID@TA=70℃
IDM
3.5
A
2.8
A
20
A
PD@TA=25℃
TSTG
Total Power Dissipation
2
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
62.5
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
℃/W
Data and specifications subject to change without notice
1
201612131