AP6N3R8ALI
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ 100% Rg & UIS Test
BVDSS
RDS(ON)
ID
60V
3.8mΩ
70A
▼ Simple Drive Requirement
▼ Ultra Low On-resistance
G
▼ RoHS Compliant & Halogen-Free
Description
AP466N034R8sAeLrieseraieres faroremfrAodmvaAndcveadncPeodweProwinenrovinanteodvadteedsigdnesign
and silicon process technology to aacchhiieevvee tthhee lloowweesstt ppoossssiibbllee on-
orens-irsetsainsctaenacnedafnadstfaswstitcshwiintcghpinegrfopremrfaonrmcea.nIctep.roItvipdreosvitdheesdtehseigner
dweitshigannerexwtritehmaeneeffxictireenmtedeevfficiceiefnotr duesveicien aforwiudseerainngae wofidpeower
raapnpgliecaotfiopnosw. er applications.
G
D
S
TO-220CFM(I)
The TO-220 package is widely preferred for all commercial-
iTnhdeusTtrOia-l220thCroFuMghpachkoalgee iaspwplidcealtyionpsre. ferTrehde folrowall cthoemrmmaelrcial-
rinedsuisstatrniacletharonudglhowhopleacakpapgliecactioosnts.conTthriebumteoldtoctohmepwouonrldwpirdoevides
paophuiglahr pisaoclkaatigoen. voltage capability and low thermal resistance
between the tab and the external heat-sink.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
60
Gate-Source Voltage
+20
V
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
70
A
44
A
250
A
PD@TC=25℃
PD@TA=25℃
EAS
Total Power Dissipation
31.3
W
W
mJ
℃
℃
Total Power Dissipation
1.92
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
45
TSTG
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
4
Rthj-a
65
1
201808301