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AP6N3R8ALI PDF预览

AP6N3R8ALI

更新时间: 2024-09-16 17:15:43
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 73K
描述
TO-220CFM

AP6N3R8ALI 数据手册

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AP6N3R8ALI  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
100% Rg & UIS Test  
BVDSS  
RDS(ON)  
ID  
60V  
3.8mΩ  
70A  
Simple Drive Requirement  
Ultra Low On-resistance  
G
RoHS Compliant & Halogen-Free  
Description  
AP6N3R8ALseries arefromAdvancedPowerinnovateddesign  
and silicon process technology to achieve the lowest possible on-  
resistanceandfastswitchingperformance.Itprovidesthedesigner  
withanextremeefficientdevicefor usein awiderange ofpower  
applications.
G
D
S
TO-220CFM(I)  
TheTO-220CFMpackage iswidelypreferredforall commercial-  
industrialthroughholeapplications.Themoldcompoundprovides  
ahighisolationvoltage capability and low thermal resistance  
between the tab and the external heat-sink.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
60  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V  
Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
70  
A
44  
A
250  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
31.3  
W
W
mJ  
Total Power Dissipation  
1.92  
Single Pulse Avalanche Energy3  
Storage Temperature Range  
Operating Junction Temperature Range  
45  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
4
Rthj-a  
65  
1
201808301