AP6N090K
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
60V
90mΩ
4.1A
D
▼ Lower Gate Charge
RDS(ON)
S
3
▼ Fast Switching Characteristic
ID
D
▼ RoHS Compliant & Halogen-Free
SOT-223
G
Description
D
S
AP6N090 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
G
The SOT-223 package is designed for suface mount application,
larger heatsink than SO-8 and SOT package.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
VDS
VGS
Drain-Source Voltage
60
V
Gate-Source Voltage
+20
V
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
ID@TA=25℃
ID@TA=70℃
IDM
4.1
A
3.2
A
20
A
PD@TA=25℃
TSTG
Total Power Dissipation
2.78
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
45
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
℃/W
Data and specifications subject to change without notice
1
201612011