AP6N036H
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
60V
▼ Lower Gate Charge
36mΩ
23.3A
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
Description
G
D
S
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TO-252(H)
The TO-220 package is widely preferred for all commercial-
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resistance.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
60
Gate-Source Voltage
+20
V
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
23.3
A
14.7
A
60
A
PD@TC=25℃
PD@TA=25℃
EAS
Total Power Dissipation
Total Power Dissipation4
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
39
W
W
mJ
℃
℃
2
24.5
TSTG
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
3.2
Rthj-a
62.5
1
201804241