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AP6N036H PDF预览

AP6N036H

更新时间: 2024-10-31 17:15:55
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 110K
描述
TO-252

AP6N036H 数据手册

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AP6N036H  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
60V  
Lower Gate Charge  
36mΩ  
23.3A  
Fast Switching Characteristic  
G
RoHS Compliant & Halogen-Free  
Description  
G
D
S
AP6N036seriesarefromAdvanced Power innovated designand  
siliconprocesstechnologytoachievethelowestpossibleon-  
resistanceandfastswitchingperformance.Itprovidesthedesigner  
withanextremeefficient devicefor useinawiderange ofpower  
applications.
TO-252(H)  
TO-252packageis widely preferredfor allcommercial-industrial  
surfacemount applicationsusinginfraredreflowtechniqueand  
suitedfor highcurrent application due to the low connection  
resistance.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
60  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V  
Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
23.3  
A
14.7  
A
60  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
Total Power Dissipation4  
Single Pulse Avalanche Energy3  
Storage Temperature Range  
Operating Junction Temperature Range  
39  
W
W
mJ  
2
24.5  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)4  
3.2  
Rthj-a  
62.5  
1
201804241