Datasheet > AP6N023H-AT

AP6N023H-AT

更新时间： 2024-09-16 17:15:43

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	109K
描述
TO-252

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中文翻译

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数据手册

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AP6N023H-AT 数据手册

AP6N023H-AT

Automotive Grade Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

R_DS(ON)

I_D

60V

▼ Simple Drive Requirement

23mΩ

26.2A

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

▼ AEC Qualified

Description

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TO-252(H)

The TO-220 package is widely preferred for all commercial-

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psuoipteudlarfpoar chkaigghe.current application due to the low connection

resistance.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

26.2

18.5

100

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

Total Power Dissipation⁴

Single Pulse Avalanche Energy³

Storage Temperature Range

Operating Junction Temperature Range

37.5

℃

2.4

16.2

T_STG

-55 to 175

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)⁴

Rthj-a

62.5

202308011AT

12 3 4 5 6

中文翻译

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