5秒后页面跳转
AP4434GM PDF预览

AP4434GM

更新时间: 2024-11-06 12:26:35
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体栅极晶体管功率场效应晶体管开关脉冲光电二极管栅极驱动
页数 文件大小 规格书
5页 182K
描述
Low on-resistance, Capable of 2.5V gate drive

AP4434GM 技术参数

生命周期:Contact Manufacturer零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantHTS代码:8541.29.00.75
风险等级:5.65Is Samacsys:N
其他特性:ULTRA-LOW RESISTANCE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏源导通电阻:0.0185 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):30 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP4434GM 数据手册

 浏览型号AP4434GM的Datasheet PDF文件第2页浏览型号AP4434GM的Datasheet PDF文件第3页浏览型号AP4434GM的Datasheet PDF文件第4页浏览型号AP4434GM的Datasheet PDF文件第5页 
AP4434GM  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Low on-resistance  
BVDSS  
RDS(ON)  
ID  
20V  
18.5mΩ  
8.3A  
D
D
D
Capable of 2.5V gate drive  
Surface mount package  
D
G
S
S
S
SO-8  
D
S
Description  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, ultra low on-resistance and  
cost-effectiveness.  
G
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
20  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±12  
V
Continuous Drain Current3,VGS @ 4.5V  
Continuous Drain Current3,VGS @ 4.5V  
Pulsed Drain Current1  
ID@TA=25  
ID@TA=70℃  
IDM  
8.3  
A
6.7  
A
30  
A
PD@TA=25℃  
Total Power Dissipation  
2
W
Linear Derating Factor  
0.02  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
62.5  
Unit  
Rthj-a  
Thermal Resistance Junction-ambient3  
Max.  
/W  
Data and specifications subject to change without notice  
200607072-1/4  

与AP4434GM相关器件

型号 品牌 获取价格 描述 数据表
AP4435D A-POWER

获取价格

P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4435GH A-POWER

获取价格

TRANSISTOR 40 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACK
AP4435GH-HF A-POWER

获取价格

Simple Drive Requirement, Lower On-resistance
AP4435GH-HF_14 A-POWER

获取价格

Simple Drive Requirement
AP4435GJ A-POWER

获取价格

TRANSISTOR 40 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PACK
AP4435GJ-HF A-POWER

获取价格

Simple Drive Requirement, Lower On-resistance
AP4435GJ-HF_14 A-POWER

获取价格

Simple Drive Requirement
AP4435GM A-POWER

获取价格

P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4435GM-HF A-POWER

获取价格

Simple Drive Requirement, Low On-resistance
AP4435GYT-HF A-POWER

获取价格

Simple Drive Requirement, Small Size & Lower Profile