AP4435D

更新时间： 2024-11-06 08:31:59

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	73K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP4435D 数据手册

AP4435D

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low On-resistance

▼ Fast Switching Speed

▼ PDIP-8 Package

BV_DSS

R_DS(ON)

I_D

-30V

20mΩ

-9A

PDIP-8

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, lower on-resistance and

cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Rating

- 30

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

- 9

- 5.8

- 50

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

Storage Temperature Range

2.5

0.02

W/℃

℃

T_STG

T_J

-55 to 150

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

℃/W

Data and specifications subject to change without notice

201114031

12 3 4

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与AP4435D相关器件

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AP4435GH	A-POWER	获取价格	TRANSISTOR 40 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACK
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AP4435GH-HF_14	A-POWER	获取价格	Simple Drive Requirement
AP4435GJ	A-POWER	获取价格	TRANSISTOR 40 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PACK
AP4435GJ-HF	A-POWER	获取价格	Simple Drive Requirement, Lower On-resistance
AP4435GJ-HF_14	A-POWER	获取价格	Simple Drive Requirement
AP4435GM	A-POWER	获取价格	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4435GM-HF	A-POWER	获取价格	Simple Drive Requirement, Low On-resistance
AP4435GYT-HF	A-POWER	获取价格	Simple Drive Requirement, Small Size & Lower Profile
AP4435M	A-POWER	获取价格	P-CHANNEL ENHANCEMENT MODE