生命周期: | Contact Manufacturer | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.8 |
其他特性: | ULTRA LOW RESISTANCE | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏源导通电阻: | 0.065 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
AP2305BGN | A-POWER | POWER, FET |
获取价格 |
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AP2305BGN-HF | A-POWER | Simple Drive Requirement, Small Package Outline |
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AP2305BGN-HF | TYSEMI | Advanced Power MOSFETs |
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AP2305CGN-HF | A-POWER | Simple Drive Requirement, Small Package Outline |
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|
AP2305GN | TYSEMI | Advanced Power MOSFETs |
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AP2305GN | A-POWER | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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