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AP2308GEN-HF PDF预览

AP2308GEN-HF

更新时间: 2024-02-27 20:37:56
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体栅极小信号场效应晶体管开关光电二极管栅极驱动
页数 文件大小 规格书
4页 64K
描述
Capable of 2.5V Gate Drive, Lower Gate Charge

AP2308GEN-HF 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.69
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):1.2 A最大漏源导通电阻:0.6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP2308GEN-HF 数据手册

 浏览型号AP2308GEN-HF的Datasheet PDF文件第2页浏览型号AP2308GEN-HF的Datasheet PDF文件第3页浏览型号AP2308GEN-HF的Datasheet PDF文件第4页 
AP2308GEN-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Capable of 2.5V Gate Drive  
BVDSS  
RDS(ON)  
ID  
20V  
600mΩ  
1.2A  
D
Lower Gate Charge  
Fast Switching Performance  
RoHS Compliant & Halogen-Free  
S
SOT-23  
G
D
S
Description  
Advanced Power MOSFETs utilized advanced processing techniques to  
achieve the lowest possible on-resistance, extremely efficient and cost-  
effectiveness device.  
The SOT-23 package is widely used for commercial-industrial  
applications.  
G
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
20  
+8  
Gate-Source Voltage  
V
Continuous Drain Current3, VGS @ 4.5V  
Continuous Drain Current3, VGS @ 4.5V  
Pulsed Drain Current1  
ID@TA=25  
ID@TA=70℃  
IDM  
1.2  
A
1
A
3.6  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
0.69  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
180  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
201204255  

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