Datasheet > AP2306AGEN-HF

AP2306AGEN-HF

更新时间： 2024-11-18 12:56:15

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	146K
描述
Advanced Power MOSFETs

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中文翻译

获取价格

数据手册

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AP2306AGEN-HF 数据手册

Product specification

AP2306AGEN-HF

▼ Capable of 2.5V Gate Drive

▼ Small Outline Package

BV_DSS

R_DS(ON)

I_D

30V

50mΩ

4.1A

▼ Surface Mount Device

▼ RoHS Compliant & Halogen-Free

SOT-23

Description

Advanced Power MOSFETs utilized advanced processing techniques to

achieve the lowest possible on-resistance, extremely efficient and cost-

effectiveness device.

The SOT-23 package is widely used for commercial-industrial applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current³, V_GS@ 4.5V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

4.1

3.3

P_D@T_A=25℃

T_STG

Total Power Dissipation

1.38

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

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AP2306GN-HF	A-POWER	获取价格	Capable of 2.5V gate drive, Lower on-resistance
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