Datasheet > AP2306AGN

AP2306AGN

更新时间： 2024-11-18 12:56:15

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	116K
描述
Advanced Power MOSFETs

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中文翻译

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数据手册

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AP2306AGN 数据手册

Product specification

AP2306AGN

▼ Capable of 2.5V gate drive

▼ Lower on-resistance

BV_DSS

R_DS(ON)

I_D

30V

35mΩ

▼ Surface mount package

SOT-23

Description

Advanced Power MOSFETs utilized advanced processing techniques

to achieve the lowest possible on-resistance, extremely efficient and

cost-effectiveness device.

The SOT-23 package is universally used for all commercial-industrial

applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 12

Continuous Drain Current³, V_GS@ 4.5V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

P_D@T_A=25℃

Total Power Dissipation

1.38

Linear Derating Factor

0.01

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

℃/W

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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