AP2304N

更新时间： 2024-09-24 08:31:47

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	76K
描述
N-CHANNEL ENHANCEMENT MODE

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数据手册

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AP2304N 数据手册

AP2304N

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

25V

117mΩ

2.7A

▼ Small package outline

▼ Surface mount package

SOT-23

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

low on-resistance and cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current³, V_GS@ 4.5V

Pulsed Drain Current^1,2

±20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

2.7

2.2

P_D@T_A=25℃

Total Power Dissipation

1.38

Linear Derating Factor

0.01

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

℃/W

Data and specifications subject to change without notice

200420043

12 3 4

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