Datasheet > AP2303N

AP2303N

更新时间： 2024-11-18 08:31:47

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	75K
描述
P-CHANNEL ENHANCEMENT MODE

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数据手册

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AP2303N 数据手册

AP2303N

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

-30V

240mΩ

- 1.9A

▼ Small Package Outline

▼ Surface Mount Device

SOT-23

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

low on-resistance and cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Rating

- 30

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current^1,2

-1.9

-1.5

-10

P_D@T_A=25℃

Total Power Dissipation

1.38

Linear Derating Factor

0.01

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

℃/W

Data and specifications subject to change without notice

200407042

12 3 4

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