AP2304AN

更新时间： 2024-11-18 08:31:47

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	105K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP2304AN 数据手册

AP2304AN

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

30V

117mΩ

2.5A

▼ Small Package Outline

▼ Surface Mount Device

SOT-23

Description

Advanced Power MOSFETs utilized advanced processing techniques

to achieve the lowest possible on-resistance, extremely efficient and

cost-effectiveness device.

The SOT-23 package is universally used for all commercial-industrial

applications.

Absolute Maximum Ratings

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Gate-Source Voltage

±20

2.5

Continuous Drain Current³, V_GS@ 10V

Pulsed Drain Current¹

P_D@T_A=25℃

Total Power Dissipation

1.38

Linear Derating Factor

Storage Temperature Range

Operating Junction Temperature Range

0.01

-55 to 150

W/℃

℃

T_STG

T_J

Thermal Data

Symbol

Rthj-a

Parameter

Value

Unit

℃/W

Thermal Resistance Junction-ambient³

Max.

Data and specifications subject to change without notice

200318041

12 3 4

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