Datasheet > AO6601

AO6601

更新时间： 2024-10-31 17:15:35

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
11页	723K
描述
种类:N+P-Channel;漏源电压（Vdss）:N：30V; P：-30V;持续漏极电流（Id）（在25°C时）:-2.3A;Vgs(th)(V):±12;漏源导通电阻:60mΩ@10V

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AO6601 数据手册

UMW

AO6601

P Channel MOSFET

N+

General Description

The AO6601 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. The

complementary MOSFETs form a high-speed power

inverter, suitable for a multitude of applications.

Features

N-Ch:

n-channel

p-channel

VDS (V)=30V

I_D= 3.4A

(V_GS=10V)

60m (VGS = 10V)

70 m (VGS = 4.5V)

90 m (VGS = 2.5V)

RDS(ON)

P-Ch:

VDS (V)=-30V

I_D=-2.3A

(V_GS=-10V)

115m (VGS = -10V)

RDS(ON)

SOT23-6

150m (VGS = -4.5V)

200 m (VGS = -2.5V)

RDS(ON)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Symbol

V_DS

Max n-channel

Max p-channel

Units

-30

Gate-Source Voltage

±12

3.4

±12

-2.3

-1.8

-15

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

2.7

I_DM

P_D

T_A=25°C

T_A=70°C

1.15

0.73

1.15

0.73

°C

Power Dissipation ^B

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

Symbol

Typ

Max

110

150

Units

°C/W

≤ 10s

R_θJA

Steady-State

106

R_θJL

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与AO6601相关器件

型号	品牌	获取价格	描述	数据表
AO6601_12	AOS	获取价格	30V Complementary MOSFET
AO6601L	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO6602	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO6602	FREESCALE	获取价格	30V Complementary MOSFET
AO6602_11	AOS	获取价格	30V Complementary MOSFET
AO6602L	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO6603	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO6603L	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO6604	FREESCALE	获取价格	N & P-Channel 20-V (D-S) MOSFET High performance trench technology
AO6604	AOS	获取价格	20V Complementary MOSFET