Datasheet > AO4800

AO4800

更新时间： 2024-10-31 17:15:55

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	371K
描述
种类:N+N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:6.9A;Vgs(th)(V):±12;漏源导通电阻:27mΩ@10V

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AO4800 数据手册

AO4800

UMW

30V Dual N-Channel MOSFET

General Description

The AO4800 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. The

two MOSFETs make a compact and efficient switch

and synchronous rectifier combination for use in buck

converters.

Features

•

V_DS(V) = 30V

I_D= 6.9A (V_GS= 10V)

R_DS(ON)< 27mΩ (V _GS= 10V)

R_DS(ON)< 32mΩ (V _GS= 4.5V)

R_DS(ON)< 50mΩ (V _GS= 2.5V)

•

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

±12

V_GS

T_A=25°C

T_A=70°C

6.9

Continuous Drain

Current ^A

Pulsed Drain Current ^B

I_D

5.8

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.44

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

110

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

www.umw-ic.com

UTD Semiconductor Co.,Limited

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与AO4800相关器件

型号	品牌	获取价格	描述	数据表
AO4800_V1	AOS	获取价格	Plastic Encapsulated Device
AO4800A	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO4800AL	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO4800B	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO4800B	FREESCALE	获取价格	30V Dual N-Channel MOSFET
AO4800B_11	AOS	获取价格	30V Dual N-Channel MOSFET
AO4800BL	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO4800C	AOS	获取价格	30V Dual N-Channel MOSFET
AO4800L	AOS	获取价格	Plastic Encapsulated Device
AO4801	FREESCALE	获取价格	P-Channel 20-V (D-S) MOSFET High performance trench technology