AO4800BL

更新时间： 2024-09-15 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	110K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AO4800BL 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.57
Base Number Matches：	1

AO4800BL 数据手册

AO4800B, AO4800BL

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4800B/L uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. The two

MOSFETs make a compact and efficient switch and

synchronous rectifier combination for use in buck

converters. Standard Product AO4800B/L is Pb-free

(meets ROHS & Sony 259 specifications).

V_DS(V) = 30V

I_D= 6.9A (V_GS= 10V)

R_DS(ON)< 27mΩ (V_GS= 10V)

R_DS(ON)< 32mΩ (V_GS= 4.5V)

R_DS(ON)< 50mΩ (V_GS= 2.5V)

UIS TESTED!

Rg,Ciss,Coss,Crss Tested!

SOIC-8

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^AF

V_GS

±12

T_A=25°C

T_A=70°C

6.9

5.8

I_D

Pulsed Drain Current^B

I_DM

T_A=25°C

T_A=70°C

1.9

P_D

Power Dissipation

Avalanche Current^B

1.2

I_AR

Repetitive avalanche energy 0.3mH^B

E_AR

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

110

Units

°C/W

Maximum Junction-to-Ambient^AF

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient^A

Maximum Junction-to-Lead^C

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4

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