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AO4801L PDF预览

AO4801L

更新时间: 2024-10-30 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 109K
描述
Dual P-Channel Enhancement Mode Field Effect Transistor

AO4801L 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.84
Is Samacsys:NBase Number Matches:1

AO4801L 数据手册

 浏览型号AO4801L的Datasheet PDF文件第2页浏览型号AO4801L的Datasheet PDF文件第3页浏览型号AO4801L的Datasheet PDF文件第4页 
AO4801  
Dual P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4801 uses advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with gate  
voltages as low as 2.5V. This device is suitable for use as a  
load switch or in PWM applications. It may be used in a  
common drain arrangement to form a bidirectional blocking  
switch. Standard Product AO4801 is Pb-free (meets ROHS &  
Sony 259 specifications). AO4801L is a Green Product  
ordering option. AO4801 and AO4801L are electrically  
identical.  
VDS (V) = -30V  
ID = -5 A (VGS = -10V)  
RDS(ON) < 49m(VGS = -10V)  
RDS(ON) < 64m(VGS = -4.5V)  
RDS(ON) < 120m(VGS = -2.5V)  
D2  
D1  
S1  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G2  
G1  
SOIC-8  
S2  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
-30  
±12  
V
V
VGS  
TA=25°C  
TA=70°C  
-5  
ID  
-4.2  
A
Pulsed Drain Current B  
IDM  
-30  
TA=25°C  
TA=70°C  
2
PD  
W
Power Dissipation A  
1.44  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
48  
74  
Max  
62.5  
110  
40  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
Steady-State  
Steady-State  
RθJA  
RθJL  
35  
Alpha & Omega Semiconductor, Ltd.  

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