Datasheet > AO4803

AO4803

更新时间： 2024-10-15 18:09:27

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
5页	743K
描述
SOP-8

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数据手册

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AO4803 数据手册

AO4803

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES

 Low on-resistance:V_DS=-30V,I_D=-5A,R_DS(ON)≤52mΩ@V_GS=-10V

 Low gate charge

 For load switch or in PWM applications.

 Surface Mount device

SOP-8

MECHANICAL DATA



Case: SOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.3 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Value

Unit

VDS

-30

±20

-5

-4.2

-20

V_GS

T_A= 25°C

T_A= 70°C

Continuous drain current

I_D

Pulsed drain current

I_DM

P_D

T_A= 25°C

T_A= 70°C

1.4

110

150

-55 ~+150

Power dissipation

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

R_θ

°C/W

°C

R_θ

T_J

T_STG

Storage temperature

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V^(BR)DSS*

Min

-30

Typ

Max

Unit

Conditions

VGS=0V, ID=-250μA

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

-1

±100

-3

I_DSS

I_GSS

μA V_DS=-24V,

VGS=0V

V_DS=0V,

VGS=±20V

-1

-1.8

V_GS(th)

V =V , I =-250μA

On-State Drain Current

I_D(ON)-20

V_DS=-5V,

V^GS=-4.5V

VGS=-10V, ID=-5A,

8.6

-0.77

mΩ

Drain-source on-resistance

R_DS(ON)

=-10V, I =-5A, T =125°C

=-4.5V, I =-4A

g_FS

V_SD

I_S

Forward transconductance

Diode forward voltage

Diode forward current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

VDS=-5V, ID=-5A

IS=-1A, VGS=0V

-1

-2.8

700

120

C_iss

C_oss

C_rss

R_g

V_{DS=-15V, VGS=0V, f=1MHz}

V_{DS=0V, VGS=0V, f=1MHz}

7.6

14.7

3.8

8.3

23.5

13.4

nC V =-4.5V,V =-15V,I =-5A

Total gate charge

Q_g

VGS=-10V,VDS=-15V,ID=-5A

Gate-source charge

Gate-drain charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_gs

Q_gd

t_d(on)

t_r

t_d(off)

t_f

VGS=-10V, VDS=-15V,

RGEN=3Ω,RL=3Ω

t_rr

Q_rr

I =-5A, dI/dt=100A/ s

nC IF=-5A, dI/dt=100A/ s

*Pulse test ; Pulse width =80µs, Duty cycle ≤0.5% .

1 / 5

E-mail:hkt@heketai.com

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与AO4803相关器件

型号	品牌	获取价格	描述	数据表
AO4803_11	AOS	获取价格	30V Dual P-Channel MOSFET
AO4803A	FREESCALE	获取价格	30V Dual P-Channel MOSFET
AO4803A	AOS	获取价格	Dual P-Channel Enhancement Mode Field Effect Transistor
AO4803A	UMW	获取价格	种类:P+P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25
AO4803A (KO4803A)	KEXIN	获取价格	Dual P-Channel MOSFET
AO4803A_11	AOS	获取价格	30V Dual P-Channel MOSFET
AO4803L	AOS	获取价格	Dual P-Channel Enhancement Mode Field Effect Transistor
AO4805	AOS	获取价格	Dual P-Channel Enhancement Mode Field Effect Transistor
AO4805	FREESCALE	获取价格	Dual P-Channel 30-V (D-S) MOSFET Low thermal impedance
AO4805	UMW	获取价格	种类:P+P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25

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