Datasheet > AO4803A

AO4803A

更新时间： 2024-09-14 17:15:31

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	692K
描述
种类:P+P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-5A;Vgs(th)(V):±20;漏源导通电阻:46mΩ@-10V

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AO4803A 数据手册

AO4803A

UMW

-30V Dual P-Channel MOSFET

General Description

The AO4803A uses advanced technology

to provide excellent R_DS(ON)with low gate

charge. This device is suitable for use as a

load switch or in PWM applications.

Product Summary

•

VDS (V) = -30V

(V_GS= -10V)

•

ID = -5A

46m

RDS(ON) ＜

Ω(V

=-10V)

74m

Ω(V

•

=-4.5V)

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

-30

±20

-5

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

-4

Pulsed Drain Current ^C

I_DM

-30

Avalanche Current ^C

I_AS, I_AR

E_AS, E_AR

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

P_D

°C

T_A=70°C

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

110

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

t ≤ 10s

R_θJA

Steady-State

R_θJL

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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