Datasheet > AO4812AL

AO4812AL

更新时间： 2024-11-18 21:12:07

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
4页	108K
描述
Transistor

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技术参数
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AO4812AL 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

AO4812AL 数据手册

AO4812A

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4812A uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. The

two MOSFETs make a compact and efficient switch

and synchronous rectifier combination for use in buck

converters. AO4812A is Pb-free (meets ROHS &

Sony 259 specifications). AO4812AL is a Green

Product ordering option. AO4812A and AO4812AL

are electrically identical.

V_DS(V) = 30V

I_D= 6.9A (V_GS= 10V)

_DS(ON)< 28mΩ (V_GS= 10V)

_DS(ON)< 42mΩ (V_GS= 4.5V)

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_A=25°C

T_A=70°C

6.9

Continuous Drain

Current ^A

Pulsed Drain Current ^B

I_D

5.8

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.44

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

110

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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