AO4805

更新时间： 2024-11-17 22:05:43

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	206K
描述
Dual P-Channel Enhancement Mode Field Effect Transistor

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中文翻译

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技术参数
数据手册

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AO4805 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	0.58	Is Samacsys：	N
Base Number Matches：	1

AO4805 数据手册

June 2002

AO4805

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4805 uses advanced trench technology to

provide excellent R_DS(ON), and ultra-low low gate

charge with a 25V gate rating. This device is suitable

for use as a load switch or in PWM applications.

V_DS(V) = -30V

I_D= -8A

R_DS(ON)< 18mΩ (V_GS= -20V)

_DS(ON)< 19mΩ (V_GS= -10V)

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-30

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±25

-8

-6.9

T_A=25°C

T_A=70°C

I_D

I_DM

Pulsed Drain Current ^B

-40

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^A

1.44

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

62.5

110

t ≤ 10s

Steady-State

R_θJA

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6

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