AO4807L

更新时间： 2024-09-13 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	111K
描述
Dual P-Channel Enhancement Mode Field Effect Transistor

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AO4807L 数据手册

AO4807

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4807 uses advanced trench technology to

provide excellent R_DS(ON), and ultra-low low gate

charge. This device is suitable for use as a load

switch or in PWM applications. Standard Product

AO4807 is Pb-free (meets ROHS & Sony 259

specifications). AO4807L is a Green Product ordering

option. AO4807 and AO4807L are electrically

identical.

V_DS(V) = -30V

I_D= -6 A (V_GS= -10V)

_DS(ON)< 35mΩ (V_GS= -10V)

_DS(ON)< 58mΩ (V_GS= -4.5V)

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-30

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±20

T_A=25°C

T_A=70°C

-6

I_D

-5

-30

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^A

1.44

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

62.5

110

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

12 3 4

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