Datasheet > AO4812

AO4812

更新时间： 2024-11-19 18:09:43

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	665K
描述
SOP-8

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AO4812 数据手册

AO4812

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES

 Low on-resistance:V_DS=30V,I_D=6.9A,R_DS(ON)≤28mΩ@V_GS=10V

 Low gate charge

 For synchronous rectifier applications

 Surface Mount device

SOP-8

MECHANICAL DATA



Case: SOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.3 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Value

±20

6.9

5.8

1.44

110

Unit

VDS

V_GS

T_A= 25°C

T_A= 70°C

Continuous drain current

I_D

Pulsed drain current

I_DM

P_D

T_A= 25°C

T_A= 70°C

Power dissipation

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

R_θ

°C/W

°C

R_θ

T_J

T_STG

150

-55 ~+150

Storage temperature

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V^(BR)DSS*

Min

Typ

Max

Unit

Conditions

VGS=0V, ID=250μA

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

±100

I_DSS

I_GSS

μA V_DS=24V,

VGS=0V

V_DS=0V,

VGS=±20V

1.9

V_GS(th)

V =V , I =250μA

On-State Drain Current

I_D(ON)

V_DS=5V,

V^GS=4.5V

VGS=10V, ID=6.9A,

22.5

31.3

34.5

15.4

0.76

mΩ

Drain-source on-resistance

R_DS(ON)*

=10V, I =6.9A, T =125°C

=4.5V, I =5A

g_FS

V_SD

I_S

C_iss

C_oss

C_rss

R_g

Forward transconductance

Diode forward voltage

Diode forward current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

VDS=5V, ID=5A

IS=1A, VGS=0V

820

680

102

V_{DS=15V, VGS=0V, f=1MHz}

V_{DS=0V, VGS=0V, f=1MHz}

3.6

8.1

6.74

13.84

1.82

3.2

4.6

4.1

20.6

5.2

16.5

7.8

nC V =4.5V,V =15V,I =6.9A

VGS=10V,VDS=15V,ID=6.9A

Total gate charge

Q_g

Q_gs

Q_gd

t_d(on)

t_r

t_d(off)

t_f

t_rr

Gate-source charge

Gate-drain charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

6.2

7.5

VGS=10V, VDS=15V,

RGEN=3Ω,RL=2.2Ω

I =6.9A, dI/dt=100A/μ s

Q_rr

nC IF=6.9A, dI/dt=100A/μ s

*Pulse test ; Pulse width =80µs, Duty cycle ≤0.5% .

1 / 6

E-mail:hkt@heketai.com

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与AO4812相关器件

型号	品牌	获取价格	描述	数据表
AO4812 (KO4812)	KEXIN	获取价格	Dual N-Channel MOSFET
AO4812_11	AOS	获取价格	30V Dual N-Channel MOSFET
AO4812A	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO4812AL	AOS	获取价格	Transistor
AO4812L	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO4813	AOS	获取价格	Dual P-Channel Enhancement Mode Field Effect Transistor
AO4813	FREESCALE	获取价格	Dual P-Channel 30-V (D-S) MOSFET White LED boost converters
AO4813 (KO4813)	KEXIN	获取价格	Dual P-Channel MOSFET
AO4813_11	AOS	获取价格	30V Dual P-Channel MOSFET
AO4813L	AOS	获取价格	Dual P-Channel Enhancement Mode Field Effect Transistor

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