Datasheet > AO4813_11

AO4813_11

更新时间： 2024-10-30 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	286K
描述
30V Dual P-Channel MOSFET

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AO4813_11 数据手册

AO4813

30V Dual P-Channel MOSFET

General Description

Product Summary

V_DS

-30V

The AO4813 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is ideal for load switch

and battery protection applications.

I_D(at V_GS=-10V)

-7.1A

_DS(ON)(at V_GS=-10V)

< 25mΩ

< 40mΩ

R_DS(ON)(at V_GS= -4.5V)

100% UIS Tested

100% R_gTested

SOIC-8

Top View

Bottom View

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-30

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

-7.1

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

I_D

-5.6

I_DM

-40

I_AS, I_AR

E_AS, E_AR

-27

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

T_A=70°C

P_D

°C

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Typ

Max

62.5

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

Steady-State

R_θJL

Rev 9: April 2011

www.aosmd.com

Page 1 of 6

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