Datasheet > AO4807_11

AO4807_11

更新时间： 2024-11-18 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	623K
描述
30V Dual P-Channel MOSFET

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AO4807_11 数据手册

AO4807

30V Dual P-Channel MOSFET

General Description

Product Summary

V_DS

-30V

The AO4807 uses advanced trench technology to provide

excellent R_DS(ON), and ultra-low low gate charge. This

device is suitable for use as a load switch or in PWM

applications.

I_D(at V_GS=-10V)

R_DS(ON)(at V_GS=-10V)

-6A

< 35mΩ

< 58mΩ

R_DS(ON)(at V_GS= -4.5V)

100% UIS Tested

100% R_gTested

SOIC-8

Top View

Bottom

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

-30

±20

-6

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

-5

Pulsed Drain Current ^C

I_DM

-30

Avalanche Current ^C

I_AS, I_AR

E_AS, E_AR

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

P_D

°C

T_A=70°C

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

Rev 6: Nov 2011

www.aosmd.com

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