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AO4812 PDF预览

AO4812

更新时间: 2024-11-18 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
4页 114K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

AO4812 技术参数

生命周期:Not Recommended零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.71配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):6 A
最大漏源导通电阻:0.03 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):50 pFJESD-30 代码:R-PDSO-G8
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AO4812 数据手册

 浏览型号AO4812的Datasheet PDF文件第2页浏览型号AO4812的Datasheet PDF文件第3页浏览型号AO4812的Datasheet PDF文件第4页 
AO4812  
Dual N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4812 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. The  
two MOSFETs make a compact and efficient switch  
and synchronous rectifier combination for use in buck  
converters. AO4812 is Pb-free (meets ROHS & Sony  
259 specifications). AO4812L is a Green Product  
ordering option. AO4812 and AO4812L are  
electrically identical.  
VDS (V) = 30V  
ID = 6.9A (VGS = 10V)  
R
R
DS(ON) < 28m(VGS = 10V)  
DS(ON) < 42m(VGS = 4.5V)  
D1  
D2  
S2  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G1  
G2  
S1  
SOIC-8  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
±20  
V
V
VGS  
TA=25°C  
TA=70°C  
6.9  
Continuous Drain  
Current A  
Pulsed Drain Current B  
A
ID  
5.8  
IDM  
30  
TA=25°C  
TA=70°C  
2
PD  
W
Power Dissipation  
1.44  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
48  
Max  
62.5  
110  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
74  
Steady-State  
Steady-State  
RθJL  
35  
Alpha & Omega Semiconductor, Ltd.  

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