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AO4806_11 PDF预览

AO4806_11

更新时间: 2024-10-30 12:51:31
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
4页 177K
描述
20V Dual N-Channel MOSFET

AO4806_11 数据手册

 浏览型号AO4806_11的Datasheet PDF文件第2页浏览型号AO4806_11的Datasheet PDF文件第3页浏览型号AO4806_11的Datasheet PDF文件第4页 
AO4806  
20V Dual N-Channel MOSFET  
General Description  
Product Summary  
The AO4806 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. They  
offer operation over a wide gate drive range from  
1.8V to 12V. It is ESD protected. This device is  
suitable for use as a uni-directional or bi-directional  
load switch, facilitated by its common-drain  
configuration.  
VDS (V) = 20V  
ID = 9.4A (VGS = 10V)  
RDS(ON) < 14m(VGS = 10V)  
RDS(ON) < 15m(VGS = 4.5V)  
RDS(ON) < 21m(VGS = 2.5V)  
RDS(ON) < 30m(VGS = 1.8V)  
ESD Rating: 2000V HBM  
100% UIS Tested  
100% Rg Tested  
SOIC-8  
D1  
D2  
Top View  
Bottom View  
Top View  
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
1
2
3
4
8
7
6
5
G1  
G2  
S1  
S2  
Pin1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
20  
V
V
Gate-Source Voltage  
VGS  
±12  
9.4  
TA=25°C  
TA=70°C  
Continuous Drain  
Current A  
ID  
A
7.5  
Pulsed Drain Current B  
IDM  
40  
TA=25°C  
TA=70°C  
2
PD  
W
°C  
Power Dissipation  
1.28  
-55 to 150  
Junction and Storage Temperature Range  
TJ, TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
45  
Max  
62.5  
110  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Steady-State  
Steady-State  
72  
Maximum Junction-to-Lead C  
RθJL  
34  
Alpha & Omega Semiconductor, Ltd.  

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