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AO4803L PDF预览

AO4803L

更新时间: 2024-10-30 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 137K
描述
Dual P-Channel Enhancement Mode Field Effect Transistor

AO4803L 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.82
Base Number Matches:1

AO4803L 数据手册

 浏览型号AO4803L的Datasheet PDF文件第2页浏览型号AO4803L的Datasheet PDF文件第3页浏览型号AO4803L的Datasheet PDF文件第4页 
AO4803  
Dual P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4803 uses advanced trench technology to  
provide excellent RDS(ON) with low gate charge. This  
device is suitable for use as a load switch or in PWM  
applications. Standard Product AO4803 is Pb-free  
(meets ROHS & Sony 259 specifications). AO4803L  
is a Green Product ordering option. AO4803 and  
AO4803L are electrically identical.  
VDS (V) = -30V  
ID = -5 A (VGS = -10V)  
R
DS(ON) < 52m(VGS = -10V)  
DS(ON) < 87m(VGS = -4.5V)  
R
SOIC-8  
Top View  
D1  
S1  
D2  
S2  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G1  
G2  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
-30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±20  
V
A
TA=25°C  
TA=70°C  
-5  
-4.2  
ID  
Pulsed Drain Current B  
IDM  
-20  
TA=25°C  
TA=70°C  
2
PD  
W
Power Dissipation A  
1.4  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
48  
Max  
62.5  
110  
40  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
74  
RθJL  
35  
Alpha & Omega Semiconductor, Ltd.  

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