AO4800C

更新时间： 2024-09-15 12:24:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	574K
描述
30V Dual N-Channel MOSFET

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AO4800C 数据手册

AO4800

30V Dual N-Channel MOSFET

General Description

Product Summary

V_DS

30V

The AO4800 uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge. The two MOSFETs

make a compact and efficient switch and synchronous

rectifier combination for use in buck converters.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

6.9A

< 27mΩ

< 32mΩ

< 50mΩ

R_DS(ON)(at V_GS= 4.5V)

R_DS(ON)(at V_GS= 2.5V)

100% UIS Tested

100% R_gTested

SOIC-8

Top View

Bottom View

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

T_A=25°C

T_A=70°C

6.9

Continuous Drain

Current

I_D

5.8

Pulsed Drain Current ^C

I_DM

Avalanche Current ^C

I_AS, I_AR

E_AS, E_AR

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

P_D

°C

T_A=70°C

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

62.5

R_θJA

Steady-State

R_θJL

Rev 6: Dec 2011

www.aosmd.com

Page 1 of 6

12 3 4 5 6

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