Datasheet > AO4801_11

AO4801_11

更新时间： 2024-10-30 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	279K
描述
30V P-Channel MOSFET

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AO4801_11 数据手册

AO4801

30V P-Channel MOSFET

General Description

Product Summary

V_DS

-30V

The AO4801 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as

a load switch or in PWM applications. It may be used in a

common drain arrangement to form a bidirectional

blocking switch.

I_D(at V_GS=-10V)

R_DS(ON)(at V_GS=-10V)

R_DS(ON)(at V_GS=-4.5V)

R_DS(ON)(at V_GS=-2.5V)

-5A

< 48mΩ

< 57mΩ

< 80mΩ

100% UIS Tested

100% R_gTested

SOIC-8

Top View

Bottom View

SOIC-8

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

-30

V_GS

±12

T_A=25°C

T_A=70°C

-5

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

I_D

-4

I_DM

-28

I_AS, I_AR

E_AS, E_AR

Avalanche energy L=0.3mH ^C

T_A=25°C

Power Dissipation ^B

T_A=70°C

P_D

°C

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

Rev 4: Feb. 2011

www.aosmd.com

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