Datasheet > AO4801

AO4801

更新时间： 2024-06-27 12:13:18

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合科泰 - HOTTECH		/
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5页	728K
描述
SOP-8

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数据手册

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AO4801 数据手册

AO4801

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES

 Low on-resistance:V_DS=-30V,I_D=-5A,R_DS(ON)≤49mΩ@V_GS

 Low gate charge

-10V

 For load switch or in PWM applications.

 Surface Mount device

SOP-8

MECHANICAL DATA



Case: SOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.3 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Value

-30

±12

-5

-4.2

-30

Unit

VDS

V_GS

T_A= 25°C

T_A= 70°C

Continuous drain current

I_D

Pulsed drain current

I_DM

P_D

T_A= 25°C

T_A= 70°C

Power dissipation

1.44

110

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

R_θ

°C/W

°C

R_θ

T_J

T_STG

150

-55 ~+150

Storage temperature

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V^(BR)DSS*

Min

-30

Typ

Max

Unit

Conditions

VGS=0V, ID=-250μA

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

-1

±100

-1.3

I_DSS

I_GSS

μA V_DS=-24V,

VGS=0V

V_DS=0V,

VGS=±12V

-0.7

-1

V_GS(th)

V =V , I =-250μA

On-State Drain Current

I_D(ON)-25

V_DS=-5V,

V^GS=-4.5V

VGS=-10V, ID=-5A,

42.5

mΩ

=-10V, I =-5A, T =125°C

Drain-source on-resistance

R_DS(ON)

=-4.5V, I =-4A

120

VGS=-2.5V, ID=-1A

VDS=-5V, ID=-5A

IS=-1A, VGS=0V

g_FS

V_SD

I_S

Forward transconductance

Diode forward voltage

Diode forward current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

Total gate charge

Gate-source charge

Gate-drain charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

-0.75

-1

-3

C_iss

C_oss

C_rss

R_g

952

103

5.9

9.5

3.1

V_{DS=-15V, VGS=0V, f=1MHz}

V_{DS=0V, V =0V, f=1MHz}

Q_g

VGS=-4.5V,VDS=-15V,ID=-5A

Q_gs

Q_gd

t_d(on)

t_r

t_d(off)

t_f

VGS=-10V, VDS=-15V,

RGEN=6Ω,RL=3Ω

t_rr

Q_rr

I =-5A, dI/dt=100A/μ s

nC IF=-5A, dI/dt=100A/μ s

*Pulse test ; Pulse width =80µs, Duty cycle ≤0.5% .

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