Datasheet > AO4706

AO4706

更新时间： 2024-09-16 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	423K
描述
30V N-Channel MOSFET

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AO4706 数据手册

AO4706

30V N-Channel MOSFET

General Description

SRFET ^TMThe AO4706 uses advanced trench

technology with a monolithically integrated Schottk

charge. This device is suitable for use as a low side

diode to provide excellent R_DS(ON),and low gate

FET in SMPS, load switching and general purpose

applications.

Features

V_DS(V) = 30V

I_D=16.5A (V_GS= 10V)

R_DS(ON)< 6.8mΩ (V_GS= 10V)

_DS(ON)< 8.2mΩ (V_GS= 4.5V)

SRFET^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

±12

Gate-Source Voltage

V_GS

T_A=25°C

T_A=70°C

16.5

13.2

100

Continuous Drain

Current ^AF

Pulsed Drain Current ^B

Avalanche Current ^B

I_DSM

I_DM

I_AR

Repetitive avalanche energy L=0.3mH ^B

E_AR

135

T_A=25°C

3.1

P_DSM

°C

T_A=70°C

Power Dissipation

2.0

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Lead ^C

R_θJL

1/6

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