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AO4714 PDF预览

AO4714

更新时间: 2024-09-16 03:45:31
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 134K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO4714 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.79
Is Samacsys:NBase Number Matches:1

AO4714 数据手册

 浏览型号AO4714的Datasheet PDF文件第2页浏览型号AO4714的Datasheet PDF文件第3页浏览型号AO4714的Datasheet PDF文件第4页 
AO4714  
N-Channel Enhancement Mode Field Effect Transistor  
TM  
SRFET  
General Description  
Features  
SRFETTM AO4714 uses advanced trench technology  
with a monolithically integrated Schottky diode to  
provide excellent RDS(ON),and low gate charge. This  
device is suitable for use as a low side FET in SMPS,  
load switching and general purpose applications.  
Standard Product AO4714 is Pb-free (meets ROHS &  
Sony 259 specifications).  
VDS (V) = 30V  
ID =20A (VGS = 10V)  
R
DS(ON) < 4.7m(VGS = 10V)  
DS(ON) < 6.7m(VGS = 4.5V)  
R
UIS TESTED!  
Rg,Ciss,Coss,Crss Tested  
D
S
S
S
G
D
D
D
D
SRFETTM  
Soft Recovery MOSFET:  
Integrated Schottky Diode  
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
30  
Units  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current F  
VGS  
±20  
TA=25°C  
TA=70°C  
20  
A
A
IDSM  
IDM  
16  
Pulsed Drain Current B  
100  
TA=25°C  
TA=70°C  
3.0  
PDSM  
W
Power Dissipation F  
Avalanche Current B  
2.0  
IAR  
30  
A
Repetitive avalanche energy L=0.3mH B  
EAR  
135  
mJ  
°C  
TJ, TSTG  
Junction and Storage Temperature Range  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
-55 to 150  
Symbol  
Typ  
31  
59  
Max  
41  
75  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
Steady-State  
Steady-State  
RθJA  
RθJL  
16  
24  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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