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AO4706_10 PDF预览

AO4706_10

更新时间: 2024-11-06 12:51:31
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 213K
描述
30V N-Channel MOSFET

AO4706_10 数据手册

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AO4706  
30V N-Channel MOSFET  
TM  
SRFET  
General Description  
Product Summary  
SRFET TM The AO4706 uses advanced trench  
technology with a monolithically integrated Schottky  
diode to provide excellent RDS(ON),and low gate  
charge. This device is suitable for use as a low side  
FET in SMPS, load switching and general purpose  
applications.  
VDS (V) = 30V  
ID =16.5A (VGS = 10V)  
RDS(ON) < 6.8m(VGS = 10V)  
R
DS(ON) < 8.2m(VGS = 4.5V)  
100% UIS Tested  
100% Rg Tested  
SOIC-8  
D
Top View  
Bottom View  
D
D
SRFETTM  
D
D
Soft Recovery MOSFET:  
Integrated Schottky Diode  
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
30  
V
Gate-Source Voltage  
VGS  
±12  
16.5  
13.2  
100  
V
TA=25°C  
TA=70°C  
Continuous Drain  
Current AF  
Pulsed Drain Current B  
Avalanche Current B  
A
IDSM  
IDM  
A
A
IAR  
30  
Repetitive avalanche energy L=0.3mH B  
EAR  
135  
mJ  
TA=25°C  
3.1  
PDSM  
W
°C  
TA=70°C  
Power Dissipation  
2.0  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
31  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Steady-State  
Steady-State  
59  
75  
Maximum Junction-to-Lead C  
RθJL  
16  
24  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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