Datasheet > AO4706_10

AO4706_10

更新时间： 2024-11-25 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	213K
描述
30V N-Channel MOSFET

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AO4706_10 数据手册

AO4706

30V N-Channel MOSFET

SRFET

General Description

Product Summary

SRFET ^TMThe AO4706 uses advanced trench

technology with a monolithically integrated Schottky

diode to provide excellent R_DS(ON),and low gate

charge. This device is suitable for use as a low side

FET in SMPS, load switching and general purpose

applications.

V_DS(V) = 30V

I_D=16.5A (V_GS= 10V)

R_DS(ON)< 6.8mΩ (V_GS= 10V)

_DS(ON)< 8.2mΩ (V_GS= 4.5V)

100% UIS Tested

100% Rg Tested

SOIC-8

Top View

Bottom View

SRFET^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±12

16.5

13.2

100

T_A=25°C

T_A=70°C

Continuous Drain

Current ^AF

Pulsed Drain Current ^B

Avalanche Current ^B

I_DSM

I_DM

I_AR

Repetitive avalanche energy L=0.3mH ^B

E_AR

135

T_A=25°C

3.1

P_DSM

°C

T_A=70°C

Power Dissipation

2.0

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Lead ^C

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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