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AO4708 PDF预览

AO4708

更新时间: 2024-11-06 03:45:31
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
5页 145K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO4708 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.83
Base Number Matches:1

AO4708 数据手册

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AO4708  
N-Channel Enhancement Mode Field Effect Transistor  
TM  
SRFET  
General Description  
Features  
SRFET TM AO4708 uses advanced trench technology  
with a monolithically integrated Schottky diode to  
provide excellent RDS(ON),and low gate charge. This  
device is suitable for use as a low side FET in SMPS,  
load switching and general purpose applications.  
Standard Product AO4708 is Pb-free (meets ROHS  
& Sony 259 specifications). AO4708L is a Green  
Product ordering option. AO4708L and AO4708 are  
electrically identical.  
VDS (V) = 30V  
ID =15A (VGS = 10V)  
R
R
DS(ON) < 8.7m(VGS = 10V)  
DS(ON) < 10.5m(VGS = 4.5V)  
UIS TESTED!  
Rg,Ciss,Coss,Crss Tested  
D
S
S
S
G
D
D
D
D
SRFETTM  
Soft Recovery MOSFET:  
Integrated Schottky Diode  
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
Pulsed Drain Current B  
Avalanche Current B  
±12  
15  
V
TA=25°C  
TA=70°C  
A
IDSM  
IDM  
12  
80  
A
A
IAR  
25  
Repetitive avalanche energy L=0.3mH B  
EAR  
94  
mJ  
TA=25°C  
Power DissipationA  
TA=70°C  
3.1  
PDSM  
W
2.0  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
32  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
60  
75  
RθJL  
17  
24  
Alpha & Omega Semiconductor, Ltd.  

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