Datasheet > AO4708L

AO4708L

更新时间： 2024-11-06 20:45:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	191K
描述
Transistor

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技术参数
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AO4708L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

AO4708L 数据手册

AO4708

30V N-Channel MOSFET

SRFET

General Description

Product Summary

SRFET ^TMAO4708 uses advanced trench technology

with a monolithically integrated Schottky diode to

provide excellent R_DS(ON),and low gate charge. This

device is suitable for use as a low side FET in SMPS,

load switching and general purpose applications.

V_DS(V) = 30V

I_D=15A (V_GS= 10V)

R_DS(ON)< 8.7mΩ (V_GS= 10V)

R_DS(ON)< 10.5mΩ (V_GS= 4.5V)

100% UIS Tested

100% Rg Tested

SOIC-8

Top View

Bottom View

SRFET^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

±12

Gate-Source Voltage

Continuous Drain

Current ^A

Pulsed Drain Current ^B

Avalanche Current ^B

V_GS

T_A=25°C

T_A=70°C

I_DSM

I_DM

I_AR

Repetitive avalanche energy L=0.3mH ^B

E_AR

T_A=25°C

Power Dissipation^A

T_A=70°C

3.1

P_DSM

°C

2.0

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Lead ^C

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

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