Datasheet > AO4712_12

AO4712_12

更新时间： 2024-11-06 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	283K
描述
30V N-Channel MOSFET

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AO4712_12 数据手册

AO4712

30V N-Channel MOSFET

SRFET

General Description

Product Summary

SRFET^TMAO4712 uses advanced trench technology with

a monolithically integrated Schottky diode to provide

excellent R_DS(ON),and low gate charge. This device is

suitable for use as a low side FET in SMPS, load

switching and general purpose applications.

V_DS

30V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

13A

< 11mΩ

< 14mΩ

100% UIS Tested

100% R_gTested

SOIC-8

Top View

Bottom View

SRFET^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±12

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

Pulsed Drain Current ^C

I_DM

Avalanche Current ^C

I_AS, I_AR

E_AS, E_AR

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

3.1

P_D

°C

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

Rev 8: December 2011

www.aosmd.com

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