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2N7002DWH6327XTSA1 PDF预览

2N7002DWH6327XTSA1

更新时间: 2024-01-12 20:35:29
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关光电二极管晶体管
页数 文件大小 规格书
9页 384K
描述
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6

2N7002DWH6327XTSA1 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:10 weeks风险等级:1.5
Is Samacsys:N其他特性:AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):0.3 A最大漏源导通电阻:3 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):3 pF
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2N7002DWH6327XTSA1 数据手册

 浏览型号2N7002DWH6327XTSA1的Datasheet PDF文件第2页浏览型号2N7002DWH6327XTSA1的Datasheet PDF文件第3页浏览型号2N7002DWH6327XTSA1的Datasheet PDF文件第4页浏览型号2N7002DWH6327XTSA1的Datasheet PDF文件第5页浏览型号2N7002DWH6327XTSA1的Datasheet PDF文件第6页浏览型号2N7002DWH6327XTSA1的Datasheet PDF文件第7页 
2N7002DW  
OptiMOSSmall-Signal-Transistor  
Features  
Product Summary  
VDS  
60  
3
V
• Dual N-channel  
RDS(on),max  
VGS=10 V  
VGS=4.5 V  
W
• Enhancement mode  
• Logic level  
4
• Avalanche rated  
ID  
0.3  
A
• Fast switching  
• Qualified according to AEC Q101  
PG-SOT363  
• 100% lead-free; RoHS compliant  
6
5
4
• Halogen-free according to IEC61249-2-21  
1
2
3
Type  
Package  
Tape and Reel Information  
Marking  
HalogenFree Packing  
Yes Non Dry  
2N7002DW PG-SOT363 H6327: 3000 pcs/reel  
X8s  
Parameter 1)  
Value  
Symbol Conditions  
Unit  
I D  
T A=25 °C  
T A=70 °C  
Continuous drain current  
0.30  
0.24  
A
I D,pulse  
T A=25 °C  
Pulsed drain current  
1.2  
1.3  
EAS  
I D=0.3 A, R GS=25 W  
Avalanche energy, single pulse  
mJ  
I D=0.3 A, VDS=48 V,  
di/dt =200 A/µs,  
T j,max=150 °C  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
V
VGS  
Gate source voltage  
±20  
ESD class  
JESD22-A114 (HBM)  
class 0 (<250V)  
0.5  
Ptot  
T A=25 °C  
Power dissipation  
W
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 150  
55/150/56  
°C  
1) Remark: one of both transistors in operation.  
Rev.2.3  
page 1  
2014-09-19  

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