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8T66SH PDF预览

8T66SH

更新时间: 2024-11-30 20:53:15
品牌 Logo 应用领域
HUTSON 局域网三端双向交流开关栅极
页数 文件大小 规格书
2页 211K
描述
4 Quadrant Logic Level TRIAC, 600V V(DRM), 6A I(T)RMS, TO-202

8T66SH 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Contact Manufacturer包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.82外壳连接:MAIN TERMINAL 2
配置:SINGLE关态电压最小值的临界上升速率:150 V/us
最大直流栅极触发电流:25 mA最大直流栅极触发电压:2.5 V
最大维持电流:50 mAJEDEC-95代码:TO-202
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
最大漏电流:0.5 mA元件数量:1
端子数量:3最高工作温度:110 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:6 A断态重复峰值电压:600 V
子类别:TRIACs表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

8T66SH 数据手册

 浏览型号8T66SH的Datasheet PDF文件第2页 
MAXIMUM RATINGS  
SYMBOL VDRM  
DEVICE NUMBERS  
UNITS  
200  
8T24*  
8T26*  
8T46*  
8T66*  
8T28*  
REPETITIVE PEAK OFF-STATE VOLTAGE (1)  
GATE OPEN, AND TJ = 110° C  
VDRM  
VOLT  
400  
600  
8T44*  
8T64*  
8T48*  
8T68*  
RMS ON-STATE CURRENT AT TC = 80º C AND  
CONDUCTION, ANGLE OF 360º  
IT(RMS)  
ITSM  
4.0  
40  
6.0  
60  
8.0  
80  
AMP  
AMP  
PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT,  
ONE-CYCLE, AT 50HZ OR 60HZ  
PEAK GATE - TRIGGER CURRENT FOR 3µSEC. MAX.  
PEAK GATE-POWER DISSIPATION AT IGT < IGTM  
AVERAGE GATE - POWER DISSIPATION  
STORAGE TEMPERATURE RANGE  
IGTM  
PGM  
PG(AV)  
Tstg  
1.2  
15  
0.3  
1.6  
18  
0.4  
1.6  
18  
0.4  
AMP  
WATT  
WATT  
°C  
-40 to +150  
-40 to +110  
OPERATING TEMPERATURE RANGE, Tj  
Toper  
°C  
ELECTRICAL CHARACTERISTICS  
AT SPECIFIED CASE TEMPERATURE  
PEAK OFF - STATE CURRENT (1) GATE OPEN  
TC = 110° C VDRM = MAX. RATING  
MAXIMUM ON - STATE VOLTAGE, (1) AT TC = 25° C AND  
IT = RATED AMPS  
MA  
MAX.  
VOLT  
MAX.  
IDRM  
VTM  
IHO  
0.5  
1.6  
30  
0.5  
1.6  
50  
0.5  
1.6  
50  
MA  
MAX.  
DC HOLDING CURRENT, (1) GATE OPEN AND TC = 25° C  
CRITICAL RATE-OF-RISE OF OFF-STATE VOLTAGE, (1)  
FOR VD = VDRM GATE OPEN, TC = 110° C  
CRITICAL  
dv/dt  
150  
150  
150  
V/µSEC.  
V/µSEC.  
CRITICAL RATE-OF-RISE OF COMMUNICATION  
VOLTAGE, (1) AT TC = 80° C, GATE UNENERGIZED,  
VD = VDRM, IT = IT (RMS)  
COMMUTATING  
4
4
4
dv/dt  
DC GATE - TRIGGER CURRENT FOR  
VD = 12VDC. RL = 60 OHM AND AT TC = 25° C  
(T2 + GATE + T2 - GATE-) Q 1 & 3  
SEE  
GATE  
SPECS.  
SEE  
GATE  
SPECS.  
SEE  
GATE  
SPECS.  
MA  
MAX.  
IGT  
(T2 + GATE - T2 - GATE +) Q 2 & 4  
DC GATE - TRIGGER VOLTAGE FOR  
VD = 12VDC. RL = 60 OHM AND AT TC = 25° C  
VOLT  
MAX.  
VGT  
Tgt  
2.5  
3
2.5  
3.  
2.5  
3
GATE CONTROLLED TURN-ON TIME  
FOR VD = VDRM IGT = 80MA TR = 0.1 µSEC.  
IT = 6A (PEAK) AND TC = 25° C  
µSEC.  
°C / WATT  
TYP  
R0J-C  
THERMAL RESISTANCE, JUNCTION-TO-CASE  
4.0  
4.2  
3.8  
NOTES:  
(1) ALL VALUES APPLY IN BOTH DIRECTIONS  
GATE SPECS  
SUFFIX  
A
I
II  
III  
IV  
50  
25  
25  
25  
N/S  
N/S  
25  
50  
25  
25  
25  
N/S  
N/S  
25  
HA  
SH  
TH  
25  
N/S  
*Add required suffix letter to part number.  
--Other gate specs available consult factory---  
SOLID STATE CONTROL DEVICES  
14  

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