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74LVC1G10GV PDF预览

74LVC1G10GV

更新时间: 2024-09-15 11:11:07
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管逻辑集成电路
页数 文件大小 规格书
15页 234K
描述
Single 3-input NAND gateProduction

74LVC1G10GV 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TSSOP,Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.27
系列:LVC/LCX/ZJESD-30 代码:R-PDSO-G6
JESD-609代码:e3长度:2.9 mm
逻辑集成电路类型:NAND GATE湿度敏感等级:1
功能数量:1输入次数:3
端子数量:6最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):260
传播延迟(tpd):21.5 ns认证状态:Not Qualified
座面最大高度:1.1 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin (Sn)
端子形式:GULL WING端子节距:0.95 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:1.5 mmBase Number Matches:1

74LVC1G10GV 数据手册

 浏览型号74LVC1G10GV的Datasheet PDF文件第2页浏览型号74LVC1G10GV的Datasheet PDF文件第3页浏览型号74LVC1G10GV的Datasheet PDF文件第4页浏览型号74LVC1G10GV的Datasheet PDF文件第5页浏览型号74LVC1G10GV的Datasheet PDF文件第6页浏览型号74LVC1G10GV的Datasheet PDF文件第7页 
74LVC1G10  
Single 3-input NAND gate  
Rev. 7 — 2 February 2022  
Product data sheet  
1. General description  
The 74LVC1G10 provides a low-power, low-voltage single 3-input NAND gate.  
The inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device  
in a mixed 3.3 V and 5 V environment.  
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall time.  
This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry  
disables the output, preventing the damaging backflow current through the device when it is  
powered down.  
2. Features and benefits  
Wide supply voltage range from 1.65 V to 5.5 V  
High noise immunity  
±24 mA output drive (VCC = 3.0 V)  
CMOS low power dissipation  
Latch-up performance exceeds 250 mA  
Direct interface with TTL levels  
Inputs accept voltages up to 5 V  
IOFF circuitry provides partial Power-down mode operation  
Complies with JEDEC standard:  
JESD8-7 (1.65 V to 1.95 V)  
JESD8-5 (2.3 V to 2.7 V)  
JESD8C (2.7 V to 3.6 V)  
JESD36 (4.5 V to 5.5 V)  
ESD protection:  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V  
CDM JESD22-C101E exceeds 1000 V  
Multiple package options  
Specified from -40 °C to +85 °C and -40 °C to +125 °C  
 
 

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