Datasheet > 74LVC1G10-Q100

74LVC1G10-Q100

更新时间： 2024-11-10 01:16:03

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74LVC1G10-Q100 数据手册

74LVC1G10-Q100

Single 3-input NAND gate

Rev. 2 — 7 December 2016

Product data sheet

1. General description

The 74LVC1G10-Q100 provides a low-power, low-voltage single 3-input NAND gate.

The inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of

this device in a mixed 3.3 V and 5 V environment.

Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall

time.

This device is fully specified for partial power-down applications using I_OFF

The I_OFFcircuitry disables the output, preventing the damaging backflow current through

the device when it is powered down.

This product has been qualified to the Automotive Electronics Council (AEC) standard

Q100 (Grade 1) and is suitable for use in automotive applications.

2. Features and benefits

 Automotive product qualification in accordance with AEC-Q100 (Grade 1)

 Specified from 40 C to +85 C and from 40 C to +125 C

 Wide supply voltage range from 1.65 V to 5.5 V

 High noise immunity

 Complies with JEDEC standard:

 JESD8-7 (1.65 V to 1.95 V)

 JESD8-5 (2.3 V to 2.7 V)

 JESD8-B/JESD36 (2.7 V to 3.6 V).

 24 mA output drive (V_CC= 3.0 V)

 CMOS low power consumption

 Latch-up performance exceeds 250 mA

 Direct interface with TTL levels

 Inputs accept voltages up to 5 V

 ESD protection:

 MIL-STD-883, method 3015 exceeds 2000 V

 HBM JESD22-A114F exceeds 2000 V

 MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )

12 3 4 5 6 7...12

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