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74AUP2G00DC PDF预览

74AUP2G00DC

更新时间: 2024-02-16 05:10:50
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
16页 84K
描述
Low-power dual 2-input NAND gate

74AUP2G00DC 数据手册

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74AUP2G00  
Philips Semiconductors  
Low-power dual 2-input NAND gate  
V
V
EXT  
CC  
5 kΩ  
V
V
O
I
PULSE  
GENERATOR  
DUT  
R
C
R
L
T
L
001aac521  
Test data is given in Table 10.  
Definitions for test circuit:  
RL = Load resistance.  
CL = Load capacitance including jig and probe capacitance.  
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.  
VEXT = External voltage for measuring switching times.  
Fig 8. Load circuitry for switching times  
Table 10. Test data  
Supply voltage  
VCC  
Load  
CL  
VEXT  
[1]  
RL  
tPLH, tPHL  
open  
tPZH, tPHZ  
tPZL, tPLZ  
0.8 V to 3.6 V  
5 pF, 10 pF, 15 pF and 30 pF 5 kor 1 MΩ  
GND  
2 × VCC  
[1] For measuring enable and disable times RL = 5 k, for measuring propagation delays, setup and hold times and pulse width RL = 1 M.  
74AUP2G00_1  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 25 August 2006  
10 of 16  

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