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40MT120UH PDF预览

40MT120UH

更新时间: 2024-09-15 22:15:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
13页 676K
描述
HALF-BRIDGE IGBT MTP UltraFast NPT IGBT

40MT120UH 数据手册

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I27126 rev. C 02/03  
40MT120UH  
UltraFast NPT IGBT  
"HALF-BRIDGE" IGBT MTP  
Features  
UltraFast Non Punch Through (NPT)  
Technology  
• Positive VCE(ON)Temperature Coefficient  
• 10µs Short Circuit Capability  
• HEXFRED TM Antiparallel Diodes with  
UltraSoft Reverse Recovery  
• Low Diode VF  
VCES = 1200V  
IC = 80A  
• Square RBSOA  
TC = 25°C  
• Aluminum Nitride DBC  
• Optional SMT Thermistor (NTC)  
• Very Low Stray Inductance Design for  
High Speed Operation  
• UL approved (file E78996)  
Benefits  
Optimized for Welding, UPS and SMPS  
Applications  
• Rugged with UltraFast Performance  
• Benchmark Efficiency above 20KHz  
• Outstanding ZVS and Hard Switching  
Operation  
• Low EMI, requires Less Snubbing  
• Excellent Current Sharing in Parallel  
Operation  
• Direct Mounting to Heatsink  
• PCB Solderable Terminals  
MMTP  
Absolute Maximum Ratings  
Parameters  
Max  
Units  
VCES  
Collector-to-Emitter Breakdown Voltage  
1200  
V
I C  
Continuos Collector Current  
@ TC = 25°C  
@ TC = 105°C  
80  
40  
A
I CM  
I LM  
I F  
Pulsed Collector Current  
160  
160  
21  
Clamped Inductive Load Current  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
@ TC = 105°C  
I FM  
160  
VGE  
VISOL  
PD  
Gate-to-Emitter Voltage  
± 20  
2500  
463  
V
RMS Isolation Voltage, Any Terminal to Case, t = 1 min  
Maximum Power Dissipation (only IGBT) @ TC = 25°C  
@ TC = 100°C  
W
185  
www.irf.com  
1

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