5秒后页面跳转
40MT120UHTAPBF PDF预览

40MT120UHTAPBF

更新时间: 2024-11-02 07:47:35
品牌 Logo 应用领域
威世 - VISHAY 双极性晶体管
页数 文件大小 规格书
12页 330K
描述
'Half Bridge' IGBT MTP (Ultrafast NPT IGBT), 80 A

40MT120UHTAPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:ROHS COMPLIANT, MTP, 12 PIN
针数:12Reach Compliance Code:compliant
风险等级:5.06其他特性:UL RECOGNIZED
外壳连接:ISOLATED最大集电极电流 (IC):80 A
集电极-发射极最大电压:1200 V配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X7
元件数量:2端子数量:7
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):463 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICONVCEsat-Max:4.91 V
Base Number Matches:1

40MT120UHTAPBF 数据手册

 浏览型号40MT120UHTAPBF的Datasheet PDF文件第2页浏览型号40MT120UHTAPBF的Datasheet PDF文件第3页浏览型号40MT120UHTAPBF的Datasheet PDF文件第4页浏览型号40MT120UHTAPBF的Datasheet PDF文件第5页浏览型号40MT120UHTAPBF的Datasheet PDF文件第6页浏览型号40MT120UHTAPBF的Datasheet PDF文件第7页 
40MT120UHAPbF, 40MT120UHTAPbF  
Vishay High Power Products  
"Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A  
FEATURES  
• Ultrafast Non Punch Through (NPT) technology  
• Positive VCE(on) temperature coefficient  
• 10 μs short circuit capability  
• Square RBSOA  
• HEXFRED® antiparallel diodes with ultrasoft reverse  
recovery and low VF  
• Al2O3 DBC  
• Optional SMD thermistor (NTC)  
• Very low stray inductance design for high speed operation  
MTP  
• UL approved file E78996  
• Speed 8 kHz to 60 kHz  
• Compliant to RoHS directive 2002/95/EC  
• Designed and qualified for industrial level  
BENEFITS  
• Optimized for welding, UPS and SMPS applications  
PRODUCT SUMMARY  
• Rugged with ultrafast performance  
• Benchmark efficiency above 20 kHz  
• Outstanding ZVS and hard switching operation  
• Low EMI, requires less snubbing  
VCES  
1200 V  
3.36 V  
80 A  
VCE(on) typical at VGE = 15 V  
IC at TC = 25 °C  
• Excellent current sharing in parallel operation  
• Direct mounting to heatsink  
• PCB solderable terminals  
• Very low junction to case thermal resistance  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
1200  
80  
UNITS  
Collector to emitter breakdown voltage  
VCES  
V
TC = 25 °C  
Continuous collector current  
IC  
TC = 104 °C  
40  
Pulsed collector current  
ICM  
ILM  
160  
160  
21  
A
Clamped inductive load current  
Diode continuous forward current  
Diode maximum forward current  
Gate to emitter voltage  
IF  
TC = 105 °C  
IFM  
160  
20  
VGE  
VISOL  
V
RMS isolation voltage  
Any terminal to case, t = 1 min  
TC = 25 °C  
2500  
463  
185  
Maximum power dissipation (only IGBT)  
PD  
W
TC = 100 °C  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94507  
Revision: 01-Mar-10  
For technical questions, contact: indmodules@vishay.com  
www.vishay.com  
1

与40MT120UHTAPBF相关器件

型号 品牌 获取价格 描述 数据表
40MT140P VISHAY

获取价格

Three Phase Bridge (Power Module), 45 A to 100 A
40MT140PA INFINEON

获取价格

THREE PHASE BRIDGE
40MT140PAPBF INFINEON

获取价格

暂无描述
40MT140PAPBF VISHAY

获取价格

暂无描述
40MT140PB INFINEON

获取价格

THREE PHASE BRIDGE
40MT140PBPBF INFINEON

获取价格

暂无描述
40MT160APBF VISHAY

获取价格

Three Phase Bridge (Power Module), 45 A to 100 A
40MT160BPBF VISHAY

获取价格

Three Phase Bridge (Power Module), 45 A to 100 A
40MT160PA INFINEON

获取价格

THREE PHASE BRIDGE
40MT160PAPBF VISHAY

获取价格

Three Phase Bridge (Power Module) 45 A to 100 A