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40MT120UHA PDF预览

40MT120UHA

更新时间: 2024-11-02 02:52:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
13页 283K
描述
UltraFast NPT IGBT

40MT120UHA 数据手册

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Bulletin I27194 rev. A 01/06  
40MT120UHA  
40MT120UHTA  
UltraFast NPT IGBT  
"HALF-BRIDGE" IGBT MTP  
Features  
UltraFast Non Punch Through (NPT)  
Technology  
• Positive VCE(ON)Temperature Coefficient  
• 10µs Short Circuit Capability  
• HEXFRED TM Antiparallel Diodes with  
UltraSoft Reverse Recovery and Low VF  
• Square RBSOA  
VCES = 1200V  
IC = 80A  
• Al2O3 DBC  
• Optional SMD Thermistor (NTC)  
• Very Low Stray Inductance Design for  
High Speed Operation  
Benefits  
Optimized for Welding, UPS and SMPS  
Applications  
• Rugged with UltraFast Performance  
• Benchmark Efficiency above 20KHz  
• Outstanding ZVS and Hard Switching  
Operation  
• Low EMI, requires Less Snubbing  
• Excellent Current Sharing in Parallel  
Operation  
• Direct Mounting to Heatsink  
• PCB Solderable Terminals  
• Very Low Junction-to-Case Thermal Resis  
tance  
MMTP  
Absolute Maximum Ratings  
Parameters  
Max  
Units  
VCES  
Collector-to-Emitter Breakdown Voltage  
1200  
V
I C  
Continuous Collector Current  
@ TC = 22°C  
@ TC = 104°C  
80  
40  
A
I CM  
Pulsed Collector Current  
160  
160  
21  
I
Clamped Inductive Load Current  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
LM  
I F  
@ TC = 105°C  
I
160  
FM  
VGE  
VISOL  
PD  
Gate-to-Emitter Voltage  
RMS Isolation Voltage, Any Terminal to Case, t = 1 min  
± 20  
2500  
463  
V
Maximum Power Dissipation (only IGBT)  
@ TC = 25°C  
@ TC = 100°C  
W
185  
www.irf.com  
1

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