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40N10B PDF预览

40N10B

更新时间: 2024-09-17 01:07:39
品牌 Logo 应用领域
平伟 - PINGWEI /
页数 文件大小 规格书
2页 194K
描述
40A mps,100 Volts N-CHANNEL MOSFET

40N10B 数据手册

 浏览型号40N10B的Datasheet PDF文件第2页 
40N10(F,B,H)  
40A mps,100 Volts N-CHANNEL MOSFET  
FEATURE  
40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  
Low gate charge  
Low Ciss  
Fast switching  
TO-220AB  
40N10  
ITO-220AB  
40N10F  
100% avalanche tested  
Improved dv/dt capability  
TO-263  
40N10B  
TO-262  
40N10H  
Absolute Maximum Ratings(TC=25,unless otherwise noted)  
Parameter  
Symbol  
40N10  
UNIT  
Drain-Source Voltage  
VDSS  
VGSS  
ID  
100  
±20  
40  
V
Gate-Source Voltage  
Continuous Drain Current  
A
Pulsed Drain Current(Note1)  
IDM  
100  
Single Pulse Avalanche Energy (Note 2)  
Avalanche Current(Note1)  
EAS  
500  
mJ  
A
IAR  
40  
Repetitive Avalanche Energy (Note1)  
Reverse Diode dV/dt (Note 3)  
Operating Junction and Storage Temperature Range  
Maximum lead temperature for soldering purposes,  
1/8"from case for 5 seconds  
EAR  
50  
mJ  
V/ns  
dv/dt  
TJ,TSTG  
4.0  
-55 to +150  
TL  
260  
10  
lbf·in  
N·m  
Mounting Torque  
6-32 or M3 screw  
1.1  
Thermal Characteristics  
TO-262  
TO-263  
Units  
ITO-220  
TO-220  
Parameter  
Symbol  
Maximum Junction-to-Case  
Maximum Power Dissipation  
RthJC  
PD  
2.5  
50  
1.25  
100  
1.25  
100  
/W  
TC=25℃  
W
- 页码 -  
Rev. 14-1  
http:// www.perfectway.cn  

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