Datasheet > 40N06

40N06

更新时间： 2024-09-17 17:15:27

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	1203K
描述
种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:55A;Vgs(th)(V):±20;漏源导通电阻:18mΩ@10V

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40N06 数据手册

UMW

UMW 40N06

60V N-Channel Enhancement Mode Power MOSFET

UMW 40N06

General Description

The 40N06 uses advanced trench technology and design to

provide excellent RDS(ON) with low gate charge. It can be

used in a wide variety of applications.

Features

VDS = 60V,ID =40A

RDS(ON),14mΩ(Typ) @ VGS =10V

RDS(ON),16mΩ(Typ) @ VGS =4.5V

Advanced Trench Technology

Excellent RDS(ON) and Low Gate Charge

Lead free product is acquired

Application

Load

Switch

PWM Application

Power management

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

TO-252

330mm

12mm

2500

40N06

Absolute Maximum Ratings(TA=25℃unless otherwise noted)

Parameter

Symbol

V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

TC=25℃

Drain Current-Continuous^Note3

I_D

TC=100℃

Drain Current-Pulsed^Note1

I_DM

E_AS

P_D

200

Avalanche Energy^Note4

℃

Maximum Power Dissipation

Storage Temperature Range

Operating Junction Temperature Range

TC=25℃

105

T_STG

T_J

-55 to +150

℃

Thermal Resistance

Parameter

Symbol

Min.

Typ.

Max

Unit

Thermal Resistance,Junction-to-Case

1.4

℃/W

θJC

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